MCC / MOSFETs
MCAC38N10YHE3-TP
Discrete Semiconductor (Diode/Rectifier/MOSFET)
COMPONENT PROFILE
MCCMOSFETsMCAC38N10YHE3-TP
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor (Diode/Rectifier/MOSFET)
- Manufacturer
- MCC
- Part number
- MCAC38N10YHE3-TP
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
18 parametersConstruction
- Part Number
- MCAC38N10YHE
- Number of Functions
- Single
- Channel
- N
- ESD Diodes
- No
- Single Pulsed Avalanche Energy E AS (mJ)
- 81
- Input Capacitance Ciss(pF)
- 1166
- Output Capacitance Coss(pF)
- 423
- Power Rating P D (W)
- 59
- Total Gate Charge Qg(nC)
- 18
- Gate-Drain Charge Qgd(nC)
- 3
Performance
- Drain-Source Voltage V DS (V)
- 100
- Gate-Source Voltage V GS (V)
- ±20
- Drain Current I D (A)
- 38
- Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)
- 0.019
- Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)
- 0.023
- Gate Threshold Voltage VGS(th) Min (V)
- 1
- Gate Threshold Voltage VGS(th) Max (V)
- 2.5
- Junction Temperature Tj [max] (°C)
- 150
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.