STM / Memory (EEPROM/Flash)
M45PE10-VMN6TP
STM · Memory (EEPROM/Flash)
COMPONENT PROFILE
STMMemory (EEPROM/Flash)M45PE10-VMN6TP
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
STM Memory (EEPROM/Flash) M45PE10-VMN6TP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- M45PE10-VMN6TP
- Category
- Memory (EEPROM/Flash)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
13 parametersConstruction
- Memory Density
- 1 Mbit (128 Kb x 8 bit)
- Memory Type
- Page-Erasable Serial Flash
- Interface
- SPI-compatible serial interface
- Page Size
- 256 bytes
- Page Write Time
- 11 ms (typ)
- Page Program Time
- 0.8 ms (typ)
- Page Erase Time
- 10 ms (typ)
- Sector Erase
- 512 Kbit
- Endurance
- More than 100,000 write cycles
- Data Retention
- More than 20 years
- Package
- SO8N (150 mil)
Performance
- Supply Voltage
- 2.7 V to 3.6 V
- Deep Power-down Current
- 1 uA (typ)
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.