STM / Memory (EEPROM/Flash)
M24C08-RMN6TP
STM · Memory (EEPROM/Flash)
COMPONENT PROFILE
STMMemory (EEPROM/Flash)M24C08-RMN6TP
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
STM Memory (EEPROM/Flash) M24C08-RMN6TP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- M24C08-RMN6TP
- Category
- Memory (EEPROM/Flash)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
13 parametersConstruction
- Memory Array
- 8 Kbit (1 Kbyte) of EEPROM
- Organization
- 1 K x 8 bits
- Interface
- I2C
- I2C Bus Modes
- 400 kHz / 100 kHz
- Page Size
- 16 byte
- Write Cycle Time
- Byte and page write within 5 ms
- Endurance
- More than 4 million write cycles
- Data Retention
- More than 200 years
- Package Name
- SO8
- Grade
- Industrial
Performance
- Supply Voltage Min
- 1.8 V
- Supply Voltage Max
- 5.5 V
- Operating Temperature
- -40 C to 85 C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.