LSGT12R022
Longteng LSGT12R022 (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TOLL
Product overview
Longteng LSGT12R022 (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- lonten
- Part number
- LSGT12R022
- Category
- Super-Junction MOSFETs
- Package
- TOLL
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
39 parametersConstruction
- (TC = 25°C ,Silicon limit)
- 335 A
- (TC = 25°C, Package limit)
- 372 A
- (TC = 100°C,Silicon limit )
- 212 A
- Avalanche energy 3)
- 1521 mJ
- Power Dissipation
- 481 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- LSGT12R022 TOLL LSGT12R022
- 200 0
- VDS=120V, VGS=0V, TJ = 25°C
- 1 μA
- VDS=120V, VGS=0V, TJ = 150°C
- 100 μA
- VGS=10V, ID=50 A，TJ = 25°C
- 1.75
- Forward transconductance gfs VDS =20V , ID=50A
- 127.7 S
- Input capacitance Ciss
- 10066
- Output capacitance Coss
- 3288 pF
- Reverse transfer capacitance Crss
- 50
- Turn-on delay time td(on)
- 116.2
- Rise time tr VDD = 60V, VGS =10V
- 145.3
- Turn-off delay time td(off) ID = 50A, Rg = 10Ω
- 108.7
- Fall time tf
- 43.2
- Gate to source charge Qgs
- 53.4
- Gate to drain charge Qgd
- 27.5 nC
- Gate charge total Qg
- 140.4
- Output Charge Qoss VDS=120V,VGS= 0V
- 421 nC
- Reverse Recovery Time trr IS=50A, di/dt=100A/us, TJ=25℃
- 93.3 ns
- Reverse Recovery Charge Qrr
- 228.7 nC
Performance
- Drain-Source Voltage
- 120 V
- Gate-Source voltage
- ±20 V
- Storage Temperature Range TSTG -5
- 5 to +150 °C
- Operating Junction Temperature Range TJ -5
- 5 to +150 °C
- Thermal Resistance, Junction-to-Case RθJC
- 0.26 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA
- 120 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=250uA
- 3.4 V
- Gate leakage current, Forward IGSSF VGS=20V, VDS=0V
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-20V, VDS=0V
- 100 nA
- Gate resistance Rg VGS=0V, VDS=0V, f=1MHz
- 0.99 Ω
- Gate plateau voltage Vplateau
- 5.5 V
- Continuous Source Current
- 335 A
- Diode Forward Voltage VSD VGS=0V, IS=50A, TJ=25℃
- 1.1 V
- Peak reverse recovery current Irrm
- 3.87 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.