L8050QLT1G
Leshan Radio L8050QLT1G (bipolar junction transistor (BJT)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- SOT-23
Product overview
Leshan Radio L8050QLT1G (bipolar junction transistor (BJT)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- LRC
- Part number
- L8050QLT1G
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
13 parametersConstruction
- V(BR)CEO
- 25 V
- V(BR)EBO
- 5 V
- V(BR)CBO
- 40 V
- IC=100mA,VCE=1V hFE
- 600
- (IC=800mA, IB =80mA) VCE(sat)
- 0.5 V
- hF E 100~200 150~300 200-400
- 300-600
Performance
- Collector-Emitter Voltage
- 25
- Collector-Base Voltage
- 40
- Emitter-Base Voltage
- 5
- Collector Current-continuoun
- 800 dc
- Thermal Resistance,Junction to Ambient R θJ
- 556 °C/W
- Collector Cutoff Current (VCB=35V)
- 150 nA
- Emitter Cutoff Current (VEB=4V)
- 150 nA
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.