KSP2222ATA
onsemi KSP2222ATA (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- TO-92-3 LF
Product overview
onsemi KSP2222ATA (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- onsemi
- Part number
- KSP2222ATA
- Category
- General-Purpose Bipolar Transistors (BJT, NPN)
- Package
- TO-92-3 LF
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
24 parametersConstruction
- PD Power Dissipation by RqJA
- 625
- VCE = 10 V, IC = 1 mA
- 50
- VCE = 10 V, IC = 10 mA
- 75
- VCE = 10 V, IC = 150 mA (Note 2)
- 300
- VCE = 10 V, IC = 500 mA (Note 2)
- 40
- IC = 500 mA, IB = 50 mA
- 1.0
- Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz
- 8 pF
- tON Turn−On Time VCC = 30 V, IC = 150 mA
- 35 ns
- tOFF Turn−Off Time VCC = 30 V, IC = 150 mA
- 285 ns
- NF Noise Figure IC = 100 mA, VCE = 10 V
- 4 dB
Performance
- VCBO Collector−Base Voltage
- 75 VAKSP
- VCEO Collector−Emitter Voltage
- 40 V2222A
- VEBO Emitter−Base Voltage
- 6.0 V
- IC Collector Current
- 600 mA
- TJ Junction Temperature
- 150 °C
- TSTG Storage Temperature −5
- 5 to 150
- RqJC Thermal Resistance, Junction−to−Case
- 83.3
- Thermal Resistance, Junction−to−Ambient
- 200
- BVCBO Collector−Base Breakdown Voltage IC = 10 mA, IE = 0
- 75 V
- BVCEO Collector−Emitter Breakdown Voltage IC = 10 mA, IB = 0
- 40 V
- BVEBO Emitter−Base Breakdown Voltage IE = 10 mA, IC = 0
- 6.0 V
- ICBO Collector Cut−Off Current VCB = 60 V, IE = 0
- 0.01 mA
- IEBO Emitter Cut−Off Current VEB = 3.0 V, IC = 0
- 10 nA
- hFE DC Current Gain VCE = 10 V, IC = 0.1 mA
- 35
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.