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InventChip / SiC MOSFETS

IV2Q06025L1

InventChip · SiC MOSFETS

New & Original Prototype to volume sourcing
COMPONENT PROFILE
InventChipSiC MOSFETS
IV2Q06025L1
Refer to manufacturer for product imagery

Product overview

650V, 25mΩ Gen2 SiC MOSFET

Manufacturer
InventChip
Part number
IV2Q06025L1
Category
SiC MOSFETS
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

10 parameters

Construction

VDS
650 V
ID (continuous)
111 A (TC=25°C), 83 A (TC=100°C)
IDM
277 A
PTOT
600 W
RDS(on)
25 mΩ (typ), 33 mΩ (max) @VGS=18V, ID=40A
VTH
1.8 ~ 4.5 V
Ciss
3090 pF
Coss
251 pF
Qg
125 nC
Tj
-55 to 175°C

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.