InventChip / SiC MOSFETS
IV2Q06025L1
InventChip · SiC MOSFETS
COMPONENT PROFILE
InventChipSiC MOSFETSIV2Q06025L1
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
650V, 25mΩ Gen2 SiC MOSFET
- Manufacturer
- InventChip
- Part number
- IV2Q06025L1
- Category
- SiC MOSFETS
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
10 parametersConstruction
- VDS
- 650 V
- ID (continuous)
- 111 A (TC=25°C), 83 A (TC=100°C)
- IDM
- 277 A
- PTOT
- 600 W
- RDS(on)
- 25 mΩ (typ), 33 mΩ (max) @VGS=18V, ID=40A
- VTH
- 1.8 ~ 4.5 V
- Ciss
- 3090 pF
- Coss
- 251 pF
- Qg
- 125 nC
- Tj
- -55 to 175°C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.