COMPONENT PROFILE
IVCTSiC MOSFETsIV1Q06040T3
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
IVCT SiC MOSFETs IV1Q06040T3 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- IVCT
- Part number
- IV1Q06040T3
- Category
- SiC MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
10 parametersConstruction
- PTOT Total power dissipation
- 348
Performance
- VDS Drain-Source voltage
- 650
- VGSmax (DC) Maximum DC voltage
- 5 to
- VGSon Recommended turn-on voltage
- 20±0.5 V
- VGSoff Recommended turn-off voltage
- 3.5 to V
- IDM Drain current (pulsed)
- 180
- Tstg Storage temperature range
- 55 to °C
- TJ Operating junction temperature
- 55 to °C
- TL Solder Temperature
- 260 °C
- Rθ(J-C) Thermal Resistance from Junction to Case
- 0.431
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.