IV1D12005O2
InventChip IV1D12005O2 (SiC MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO220
Product overview
InventChip IV1D12005O2 (SiC MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- IVCT
- Part number
- IV1D12005O2
- Category
- SiC MOSFETs
- Package
- TO220
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
11 parametersConstruction
- IFSM
- 35 A
- IFRM
- 28 A
- Total power dissipation @ Tc=25°C
- 110
- Total power dissipation @ Tc=150°C
- 18
- ∫i dt I t value @Tc=25°C tp=10ms
- 6.1 As
Performance
- VRRM Reverse voltage (repetitive peak)
- 1200 V
- VDC DC blocking voltage
- 1200 V
- Forward current (continuous) @Tc=25°C
- 17 A
- IF Forward current (continuous) @Tc=135°C
- 8 A
- Forward current (continuous) @Tc=155°C
- 5 A
- Rth(j-c) Thermal Resistance from Junction to Case
- 1.36
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.