IRLHM620TRPBF
Infineon IRLHM620TRPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- PDIP
Product overview
Infineon IRLHM620TRPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRLHM620TRPBF
- Category
- HEXFET Power MOSFETs
- Package
- PDIP
- Packaging
- Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
40 parametersConstruction
- PD @TA = 25°C Power Dissipation
- 2.7
- PD @TC(Bottom) = 25°C Power Dissipation
- 37
- IGSS Gate-to-Source Forward Leakage
- 100 VGS=12V
- Gate-to-Source Reverse Leakage
- 100 VGS=-12V
- gfs Forward Transconductance
- 58
- Qg Total Gate Charge
- 52 VDS=10V
- Qgs Gate-to-Source Charge
- 6.3
- Qgd Gate-to-Drain Charge
- 25
- td(on) Turn-On Delay Time
- 7.5
- tr Rise Time
- 25 ID=20A
- td(off) Turn-Off Delay Time
- 57 RG=1.0
- tf Fall Time
- 37
- Ciss Input Capacitance
- 3620 VGS=0V
- Coss Output Capacitance
- 900
- Crss Reverse Transfer Capacitance
- 620 ƒ=1.0MHz
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 120 mJ
- Qrr Reverse Recovery Charge ––– 68 100
- 220A/µs
- trr Reverse Recovery Time
- 41
- Qrr Reverse Recovery Charge
- 68
- RJC (Bottom) Junction-to-Case
- 3.4
- RJC (Top) Junction-to-Case
- 37
- RJA Junction-to-Ambient
- 46
- RJA (<10s) Junction-to-Ambient
- 31
- 60µs PULSE
- 10V
Performance
- VDS Drain-to-Source Voltage
- 20
- VGS Gate-to-Source Voltage
- ± 12
- ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V
- 26
- ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V
- 21
- ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V
- 40 A
- ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V
- 40
- IDM Pulsed Drain Current
- 160
- BVDSS Drain-to-Source Breakdown Voltage
- 20
- BVDSS/TJ Breakdown Voltage Temp. Coefficient
- 5.4
- RDS(on) Static Drain-to-Source On-Resistance
- 1.8
- VGS(th) Gate Threshold Voltage
- 0.8 V
- VGS(th) Gate Threshold Voltage Coefficient
- 4.3 mV/°CDS
- IDSS Drain-to-Source Leakage Current
- 1
- RG Gate Resistance
- 2.6
- IAR Avalanche Current
- 20 A
- VSD Diode Forward Voltage
- 1.2
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.