IRFZ48NPBF
Infineon IRFZ48NPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Infineon IRFZ48NPBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFZ48NPBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
34 parametersConstruction
- PD @TC = 25°C Power Dissipation 1
- 30 W
- EAR Repetitive Avalanche Energy
- 13 mJ
- RθJC Junction-to-Case
- 1.15
- RθCS Case-to-Sink, Flat, Greased Surface
- 0.50 °C/W
- RθJA Junction-to-Ambient
- 62
- gfs Forward Transconductance
- 24
- Gate-to-Source Forward Leakage
- 0 VGS=20V
- Gate-to-Source Reverse Leakage
- 00 VGS=-20V
- td(on) Turn-On Delay Time
- 12 – VDD=28V
- tr Rise Time
- 78 – ID=32A
- td(off) Turn-Off Delay Time
- 34 – RG=0.85Ω
- tf Fall Time
- 50
- LD Internal Drain Inductance
- 4.5
- LS Internal Source Inductance
- 7.5
- Ciss Input Capacitance
- 970 – VGS=0V
- Coss Output Capacitance
- 70 –– VDS=25V
- Crss Reverse Transfer Capacitance
- 20
- EAS Single Pulse Avalanche Energy
- 00 19
- trr Reverse Recovery Time
- 68 10
- Qrr Reverse Recovery Charge
- 220 3
- 10V
- 10V
- 8.0V
- 8.0V
- 7.0V
- 7.0V
- 6.0V
- 6.0V
- 5.5V
- 5.5V
- 5.0V
- 5.0V
- TJ
- = 25 °C
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 64
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 45 A
- IDM Pulsed Drain Current 2
- 10
- VGS Gate-to-Source Voltage ±
- 20 V
- IAR Avalanche Current
- 32 A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 55
- VGS(th) Gate Threshold Voltage
- 2.0
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.