COMPONENT PROFILE
VISHAYMOSFETsIRF530SPBF
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
VISHAY MOSFETs IRF530SPBF is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- VISHAY
- Part number
- IRF530SPBF
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
37 parametersConstruction
- Linear derating factor
- 0.59
- Linear derating factor (PCB mount) e
- 0.025
- Single pulse avalanche energy b
- 69 mJ
- Repetitive avalanche energy a
- 8.8 mJ
- Maximum power dissipation TC = 25 °C
- 88
- Maximum power dissipation (PCB mount) e TA = 25 °C
- 3.7
- Peak diode recovery dv/dt c dv/dt
- 5.5 V/ns
- S20-0683-Rev. D, 07-Sep-2020 1 Document Number: 91
- 020
- Maximum junction-to-ambient RthJA
- 62
- RthJA
- 40 °C/W
- Maximum junction-to-case (drain) RthJC
- 1.7
- Gate-source leakage IGSS VGS = ± 20
- ± 100 nA
- VDS = 100 V, VGS = 0
- 25
- VDS = 80 V, VGS = 0 V, TJ = 150 °C
- 250
- Forward transconductance gfs VDS = 50 V, ID = 8.4 A b
- 5.1 S
- Input capacitance Ciss VGS = 0 V
- 670
- Output capacitance Coss VDS = 25 V
- 250 pF
- Reverse transfer capacitance Crss f = 1.0 MHz, see fig. 5
- 60
- Total gate charge Qg
- 26
- Gate-source charge Qgs VGS = 10
- 5.5 nC
- Gate-drain charge Qgd
- 11
- Turn-on delay time td(on)
- 10
- Rise time tr VDD = 50 V, ID = 14 A
- 34
- Fall time tf
- 24
- Internal drain inductance
- 4.5
- Internal source inductance LS die contact
- 7.5
- Body diode reverse recovery time trr
- 150 ns
- Body diode reverse recovery charge Qrr
- 0.85 μC
- S20-0683-Rev. D, 07-Sep-2020 2 Document Number: 91
- 020
Performance
- Drain-source voltage
- 100
- Gate-source voltage
- ± 20
- Avalanche current a
- 14 A
- Soldering recommendations (peak temperature) d for 10 s
- 300
- Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA
- 100 V
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 4.0 V
- Gate input resistance Rg f = 1 MHz, open drain
- 4.7
- Body diode voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 V b
- 2.5 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.