IPD60R360P7S
Infineon IPD60R360P7S (CoolMOS high-voltage superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- DPAK
Product overview
Infineon IPD60R360P7S (CoolMOS high-voltage superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IPD60R360P7S
- Category
- CoolMOS High-Voltage Super-Junction MOSFETs
- Package
- DPAK
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
6 parametersConstruction
- VDS @ Tj,max
- 650 V
- RDS(on),max
- 360 mΩ
- Qg,typ
- 13 nC
- ID,pulse
- 26 A
- Eoss @ 400V
- 1.6 µJ
- Body diode diF/dt
- 900 A/µs
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.