COMPONENT PROFILE
InfineonIGBTsIKW30N65H5
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Infineon IGBTs IKW30N65H5 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Infineon
- Part number
- IKW30N65H5
- Category
- IGBTs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
12 parametersConstruction
- TC=25°C
- 55.0 A
- TC=100°C
- 35.0
- PowerdissipationTC=25°C
- 188.0
- PowerdissipationTC=100°C
- 94.0
- wave soldering 1.6mm (0.063in.) from case for 10s
- 260
- Rth(j-c)
- 0.80 K/W
- Rth(j-a)
- 40 K/W
Performance
- Collector-emitter voltage
- 650 V
- TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
- 90.0 A
- Diodepulsedcurrent,tplimitedbyTvjmax IFpuls
- 54.0 A
- Gate-emitter voltage
- ±20
- TransientGate-emittervoltage(tp≤10µs,D<0.010)
- ±30
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.