TOSHIBA / Bipolar Transistors (BJT)
HN1A01FE-Y,LF
Discrete Semiconductor / IC
COMPONENT PROFILE
TOSHIBABipolar Transistors (BJT)HN1A01FE-Y,LF
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor / IC
- Manufacturer
- TOSHIBA
- Part number
- HN1A01FE-Y,LF
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
9 parametersConstruction
- Polarity
- PNP + PNP (2 in 1, Independent)
- Package
- SOT-563 (ES6), 6 pins
- Dimensions
- 1.6 × 1.6 × 0.55 mm
- Transition Frequency fT (Min)
- 80 MHz
- Qualification
- AEC-Q101
Performance
- Collector Current IC (Q1/Q2)
- -0.15 A
- Collector-Emitter Voltage VCEO (Q1/Q2)
- -50 V
- DC Current Gain hFE (IC=-0.002A, VCE=-6V)
- 120 ~ 400
- Collector-Emitter Saturation Voltage VCE(sat) (Max)
- -0.3 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.