Diodes / Bipolar Transistors (BJT)
FMMT497TA
Bipolar Transistor
COMPONENT PROFILE
DiodesBipolar Transistors (BJT)FMMT497TA
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Diodes Bipolar Transistors (BJT) FMMT497TA is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Diodes
- Part number
- FMMT497TA
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
25 parametersConstruction
- Power dissipation at Tamb=25°C Ptot
- 500 mW
- Collector-base V(BR)CBO
- 300
- Collector-emitter VCEO(sus)
- 300
- Emitter-base V(BR)EBO
- 5
- Collector-emitter VCE(sat)
- 0.2
- Base-emitter VBE(sat)
- 1.0
- Base-emitter VBE(on)
- 1.0
- transfer ratio
- 300
- Transition frequency fT
- 75
- output capacitance Cobo
- 5
- Switching performance td
- 53
- tr
- 126
- ts
- 2.58 s
- tf
- 228 ns
Performance
- Collector-base voltage
- 300 V
- Collector-emitter voltage
- 300 V
- Emitter-base voltage
- 5 V
- Continuous collector current
- 500 mA
- Peak pulse current
- 1 A
- Base current
- 200 mA
- Operating and storage temperature range Tj:Tstg -5
- 5 to +150 °C
- Collector cut-off current
- 100
- Emitter cut-off current
- 100 nAVEB=4V
- saturation voltage
- 0.3
- Static forward current hFE
- 100
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.