FUDAN MICRO / Memory (EEPROM/Flash)
FM2145
FUDAN MICRO · Memory (EEPROM/Flash)
COMPONENT PROFILE
FUDAN MICROMemory (EEPROM/Flash)FM2145
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
FUDAN MICRO Memory (EEPROM/Flash) FM2145 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- FUDAN MICRO
- Part number
- FM2145
- Category
- Memory (EEPROM/Flash)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
15 parametersConstruction
- Gain Bandwidth Product F = 50KHz
- 1.8 MHz
- R1 Pin1 to Pin3
- 10 KΩ
- R2 Pin2 to Pin3
- 10 KΩ
- R3 Pin5 to Pin4
- 4.7 KΩ
- Detector On
- 2.8 V
- Detector Off
- 1.0 mV
Performance
- Detector Reference Voltage Pin7 to Pin3
- 7.2 ±V
- Zener Voltage (+Vs) Pin6 to Pin4
- 26 V
- Reference Voltage (VREF) Pin3 to Pin4
- 13 V
- Quiescent Current (Is) +VS = 24V
- 450 μA
- Offset Voltage Pin2 to Pin3
- 0.5 mV
- +Output Voltage Swing Pin7 to Pin3
- 7.2 V
- Output Voltage Swing Pin7 to Pin3
- 11.2 V
- +Output Source Current Pin7 to Pin3
- 650 μA
- Output Source Current Pin7 to Pin3
- 1.0 MA
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.