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FSC / Thyristors (SCR)

FDN5630

Discrete / Power Semiconductor

New & Original Prototype to volume sourcing
COMPONENT PROFILE
FSCThyristors (SCR)
FDN5630
Refer to manufacturer for product imagery

Product overview

Discrete / Power Semiconductor

Manufacturer
FSC
Part number
FDN5630
Category
Thyristors (SCR)
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

26 parameters

Construction

BVDSS Drain–Source Breakdown
0
VGS = 10 V, ID = 1.7
0.180
VGS = 6 V, ID = 1.6
0.120
gFS Forward Transconductance VDS = 10 V, ID = 1.7
6 S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V
400 pF
Coss Output Capacitance
65
Crss Reverse Transfer Capacitance
27
td(on) Turn–On Delay Time VDD = 30 V, ID = 1 A
10 ns
tr Turn–On Rise Time
6
td(off) Turn–Off Delay Time
15
tf Turn–Off Fall Time
5
Qg Total Gate Charge VDS = 20 V, ID = 1.7 A
7 nC
Qgs Gate–Source Charge
1.6
Qgd Gate–Drain Charge
1.2

Performance

RJA Thermal Resistance, Jun
250
RJC Thermal Resistance, Jun
75
VGS(th) Gate Threshold Voltage
1
ID(on) On–State Drain Current
5
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A
60 V
BV DSS Breakdown Voltage Temperature ID = 250 A
63 V/C
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0
1 A
IGSSF Gate–Body Leakage Current, Forward VGS = 20 V, VDS = 0
100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A
2.4 V
V GS(th) Gate Threshold Voltage Temperature ID = 250 A
−6.9 V/C
ID(on) On–State Drain Current VGS = 10 V, VDS = 1.7
5 A
IS Maximum Continuous Drain–Source Diode Forward Current
0.42 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.