onsemi / TVS Diodes
ESD8472MUT5G
TVS Diode (Transient Voltage Suppressor)
COMPONENT PROFILE
onsemiTVS DiodesESD8472MUT5G
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01 / PRODUCT INFORMATION
Product overview
TVS Diode (Transient Voltage Suppressor)
- Manufacturer
- onsemi
- Part number
- ESD8472MUT5G
- Category
- TVS Diodes
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
18 parametersConstruction
- IEC 61000−4−2 Level 4 (Contact) (Note 1)
- ±20 kV
- IEC 61000−4−2 Level 4 (Air) (Note 1)
- ±20
- Total Power Dissipation (Note 3) @ TA = 25°C °PD°
- 300 mW
- Junction Capacitance CJ VR = 0 V, f = 1 MHz
- 0.20 pF
- VR = 0 V, f = 1 GHz
- 0.15
- Insertion Loss f = 1 MHz
- 0.050 dB
- f = 8.5 GHz
- 0.250
- Positive 8 kV Contact per IEC61000−4−2 Negative 8 kV Conta
- 000−4−2
Performance
- Maximum Peak Pulse Current
- 2.4 A
- Thermal Resistance, Junction−to−Ambient RqJA
- 400 °C/W
- Junction and Storage Temperature Range TJ, Tstg
- −55 to °C
- Lead Solder Temperature − Maximum
- 260 °C
- Reverse Working Voltage
- 5.3 V
- Breakdown Voltage VBR IT = 1 mA (Note 4)
- 12 V
- Reverse Leakage Current IR VRWM = 5.3
- <1 nA
- Clamping Voltage VC IPP = 1 A (Note 5)
- 11 V
- Clamping Voltage VC IPP = 2.4 A (Note 5)
- 15 V
- Dynamic Resistance RDYN TLP Pulse
- 0.75 W
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.