COMPONENT PROFILE
DiodesMOSFETsDMP2006UFG-7
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Diodes MOSFETs DMP2006UFG-7 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Diodes
- Part number
- DMP2006UFG-7
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
26 parametersConstruction
- Avalanche Energy (Note 7) L = 0.1mH
- 28 mJ
- Gate-Source Leakage
- 100
- Input Capacitance Ciss
- 5404
- Output Capacitance Coss
- 1 pF
- Reverse Transfer Capacitance Crss
- 612
- Total Gate Charge (VGS = -4.5V) Qg
- 64
- Total Gate Charge (VGS = -10V) Qg
- 140
- Gate-Source Charge Qgs
- 8.5
- Gate-Drain Charge Qgd
- 17
- Turn-On Delay Time tD(ON)
- 9.1
- Turn-On Rise Time tR
- 19
- Turn-Off Delay Time tD(OFF)
- 146
- Turn-Off Fall Time tF
- 104
- Reverse Recovery Time (Note 9) tRR
- 61
- Reverse Recovery Charge (Note 9)
- 44
Performance
- Drain-Source Voltage
- 20 V
- Gate-Source Voltage
- ±10 V
- Continuous Drain Current (Note 5) VGS = -4.5V TA = +70°C
- 14.0 A
- Maximum Continuous Body Diode Forward Current (Note 5)
- 2.2 A
- Avalanche Current (Note 7) L = 0.1mH
- 23 A
- Thermal Resistance, Junction to Case (Note 5) RθJC
- 3.0
- Drain-Source Breakdown Voltage
- 20
- Zero Gate Voltage Drain Current
- 1
- Gate Threshold Voltage VGS(TH)
- 1.0
- Diode Forward Voltage
- 0.7
- Gate Resistance
- 3.8
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.