C1815
Changjiang (CJ) C1815 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Package
- SOT-23
Product overview
Changjiang (CJ) C1815 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Manufacturer
- CHANGJING
- Part number
- C1815
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
16 parametersConstruction
- PC Collector Power Dissipation
- 200 mW
- Transition frequency fT
- 80 MHz
- Range 130-200
- 0
Performance
- VCBO Collector-Base Voltage
- 60 V
- VCEO Collector-Emitter Voltage
- 50 V
- VEBO Emitter-Base Voltage
- 5 V
- IC Collector Current -Continuous
- 150 mA
- Tj Junction Temperature
- 150 ℃
- Tstg Storage Temperature
- 55-150 ℃
- Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0
- 60 V
- Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0
- 50 V
- Collector cut-off current ICBO VCB=60V, IE=0
- 0.1 uA
- Collector cut-off current ICEO VCE=50V, IB=0
- 0.1 uA
- Emitter cut-off current IEBO VEB= 5V, IC=0
- 0.1 uA
- DC current gain hFE VCE= 6V, IC= 2mA
- 400
- Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA
- 1 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.