VISHAY / Standard Recovery Rectifiers
BYG21M-E3/TR
Discrete Semiconductor
COMPONENT PROFILE
VISHAYStandard Recovery RectifiersBYG21M-E3/TR
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor
- Manufacturer
- VISHAY
- Part number
- BYG21M-E3/TR
- Category
- Standard Recovery Rectifiers
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
11 parametersConstruction
- Type
- Fast avalanche SMD rectifier
- Reverse Recovery Time trr
- 120 ns
- Pulse Energy ER
- 20 mJ
- Circuit Configuration
- Single
- Package
- SMA (DO-214AC)
Performance
- Repetitive Peak Reverse Voltage VRRM
- 1000 V
- Average Forward Current IF(AV)
- 1.5 A
- Peak Forward Surge Current IFSM
- 30 A
- Forward Voltage VF
- 1.6 V @ 1.5 A; 1.5 V @ 1 A
- Reverse Current IR
- 1 µA (TJ = 25 °C) / 10 µA (TJ = 100 °C)
- Operating Junction Temperature
- -55 °C to +150 °C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.