BSS138LT1G
onsemi BSS138LT1G (MOSFET - small-signal / general-purpose (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi BSS138LT1G (MOSFET - small-signal / general-purpose (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- onsemi
- Part number
- BSS138LT1G
- Category
- Small-Signal / General-Purpose N-Channel MOSFETs
- Package
- SOT-23
- Packaging
- Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
21 parametersConstruction
- Continuous @ TA = 25 °C
- 200
- Total Power Dissipation @ TA = 25 °C
- 225 mW
- (VDS = 25 Vdc, VGS = 0 Vdc, 25 °C)
- 0.1
- (VDS = 50 Vdc, VGS = 0 Vdc, 25 °C)
- 0.5
- (VDS = 50 Vdc, VGS = 0 Vdc, 150 °C)
- 5.0
- (VGS = 2.75 Vdc, ID < 200 mAdc, TA = -40 °C to +85 °C)
- 5.6
- (VGS = 5.0 Vdc, ID = 200 mAdc)
- 3.5
- Forward Transconductance gfs
- 100 mhos
- Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss
- 40 pF
- Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss
- 12
- Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss
- 3.5
- Turn-On Delay Time td(on)
- 20 ns
- Turn-Off Delay Time td(off)
- 20
Performance
- Drain-to-Source Voltage
- 50 Vdc
- Gate-to-Source Voltage - Continuous
- ± 20 Vdc
- Operating and Storage Temperature TJ, Tstg
- 55 to 150
- Thermal Resistance, RqJA
- 556 °C/W
- Maximum Lead Temperature for
- 260 °C
- Drain-to-Source Breakdown Voltage V(BR)DSS
- 50 Vdc
- Gate-Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
- ±0.1 mAdc
- Gate-Source Threshold Voltage VGS(th)
- 1.5 Vdc
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.