BFR93A E6327
Infineon BFR93A E6327 (RF transistor) targets high-frequency applications such as RF front-ends, wireless connectivity and microwave communication. Genuine original stock; frequency range, gain and noise figure are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- SOT-143
Product overview
Infineon BFR93A E6327 (RF transistor) targets high-frequency applications such as RF front-ends, wireless connectivity and microwave communication. Genuine original stock; frequency range, gain and noise figure are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- BFR93A E6327
- Category
- RF Transistors
- Package
- SOT-143
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
17 parametersConstruction
- Total power dissipation1) Ptot
- 300 mW
- Junction - soldering point2) RthJS
- 130 K/W
- Collector-base capacitance Ccb - 0
- 54
- Collector emitter capacitance Cce - 0
- 25
- Emitter-base capacitance Ceb - 1
- 9
- f = 900 MHz - 1
- 5
- f = 1.8 GHz - 2
- 6
- f = 1.8 GHz - 9
- 5
- Transition frequency fT
- 4.5 -GHz
Performance
- Collector-emitter voltage
- 12 V
- Collector-base voltage
- 20
- Emitter-base voltage
- 2
- Collector current
- 90 mA
- Base current
- 9
- Junction temperature
- 150 °C
- Storage temperature TStg -5
- 5 ... 150
- DC current gain hFE 70
- 100
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.