BCX56,115
NXP Semiconductors BCX56,115 (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
Isometric preview; switch to top or 3D.
SOT-89 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-89
Product overview
NXP Semiconductors BCX56,115 (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NXP
- Part number
- BCX56,115
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-89
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
12 parametersConstruction
- Transistor Type
- NPN
- Total Power Dissipation Ptot
- 0.50 W
- Transition Frequency fT
- 100 MHz (min)
- Package
- SOT89 (SC-62), 4.5 x 2.5 x 1.5 mm
Performance
- Collector-Base Voltage VCBO
- 100 V
- Collector-Emitter Voltage VCEO
- 80 V
- Emitter-Base Voltage VEBO
- 5 V
- Collector Current IC
- 1 A
- Peak Collector Current ICM
- 2 A
- Base Current IB
- 0.3 A
- DC Current Gain hFE
- 63 - 250
- Junction Temperature Tj
- 150 °C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.