onsemi / Bipolar Transistors (BJT)
BCP68T1G
Discrete Semiconductor
COMPONENT PROFILE
onsemiBipolar Transistors (BJT)BCP68T1G
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor
- Manufacturer
- onsemi
- Part number
- BCP68T1G
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
23 parametersConstruction
- (IC = 100 mAdc, IE = 0)
- 25
- (IC = 1.0 mAdc, IB = 0)
- 20
- (IE = 10 mAdc, IC = 0)
- 5.0
- (VCB = 25 Vdc, IE = 0)
- 10
- (VEB = 5.0 Vdc, IC = 0)
- 10
- (IC = 5.0 mAdc, VCE = 10 Vdc)
- 50
- (IC = 500 mAdc, VCE = 1.0 Vdc)
- 375
- (IC = 1.0 Adc, VCE = 1.0 Vdc)
- 60
- (IC = 1.0 Adc, IB = 100 mAdc)
- 0.5
- (IC = 10 mAdc, VCE = 5.0 Vdc)
- 60
- Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo
- 15 pF
- Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz) Cibo
- 145 pF
- 50 f =
- 30 MHz
Performance
- Collector−Emitter Voltage
- 20
- Collector−Base Voltage
- 25 Vdc
- Emitter−Base Voltage
- 5.0 Vdc
- Collector Current
- 1.0
- Collector Current − Peak (Note 2)
- 3.0 Adc
- Base Current − Continuous
- 0.4 Adc
- Base Current − Peak
- 0.4
- Operating and Storage Temperature TJ, Tstg −6
- 5 to 150
- Thermal Resistance, Junction−to−Ambient RqJA
- 83.3 C/W
- Lead Temperature for Soldering
- 260 C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.