BC856BLT1G
onsemi BC856BLT1G (bipolar junction transistor (BJT) - general-purpose (PNP)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
Isometric preview; switch to top or 3D.
SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi BC856BLT1G (bipolar junction transistor (BJT) - general-purpose (PNP)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- onsemi
- Part number
- BC856BLT1G
- Category
- General-Purpose Bipolar Transistors (BJT, PNP)
- Package
- SOT-23
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
32 parametersConstruction
- BC858, NSVBC858
- −30
- Substrate, (Note 2) TA = 25°C
- 300
- (IC = −10 mA) BC857, SBC857 Series
- −45
- BC858, NSBVC858 BC859 Series
- −30
- (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only
- −50
- BC858, NSVB858, BC859 Series
- −30
- BC858, NSVBC858, BC859 Series
- −30
- (IE = −1.0 mA) BC857, SBC857 Series
- −5.0
- (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B
- 150
- BC857C, SBC857C
- 270
- (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A
- 180
- BC856B, SBC856B, BC857B, SBC857B, BC858B
- 290
- BC857C, SBC857C, BC858C
- 520
- (IC = −10 mA, IB = −0.5 mA)
- 0.3
- (IC = −100 mA, IB = −5.0 mA)
- 0.65
- (IC = −2.0 mA, VCE = −5.0 V)
- 0.75
- (IC = −10 mA, VCE = −5.0 V)
- 0.82
- Output Capacitance Cob
- 4.5 pF
- BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
- 10
- BC859 Series
- 4.0
- Delay Time (VCC = −3.0 Vdc, IC = −10 mA, IE = −1 mA) td
- 35 ns
- Rise Time (VCC = −3.0 Vdc, IC = −10 mA, IE = −1 mA) tr
- 25 ns
- Storage Time (VCC = −3.0 Vdc, IC = −10 mA, IE = −1 mA) ts
- 310 ns
- Fall Time (VCC = −3.0 Vdc, IC = −10 mA, IE = −1 mA) tf
- 40 ns
Performance
- Emitter−Base Voltage
- −5.0
- Collector Current − Continuous
- −100
- Collector Current − Peak
- −200
- Thermal Resistance, RqJA
- 556 °C/W
- Collector Cutoff Current (VCB = −30 V)
- −15 nA
- Collector Cutoff Current (VCB = −30 V, TA = 150°C)
- −4.0 mA
- DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A hFE
- 90 −
- Current −Gain − Bandwidth Product fT
- 100 MHz
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.