onsemi / Bipolar Transistors (BJT)
BC847CDW1T1G
Bipolar Transistor
COMPONENT PROFILE
onsemiBipolar Transistors (BJT)BC847CDW1T1G
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
onsemi Bipolar Transistors (BJT) BC847CDW1T1G is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- onsemi
- Part number
- BC847CDW1T1G
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
13 parametersConstruction
- Total Device Dissipation
- 380 mW
- Per Device
- 250 mW
- Junction to Ambient
- 328
- BC846BDW1, BC847BDW1, BC848CDW
- 1
- (VCB = 30 V)
- 15 nA
- (VCB = 30 V, TA = 150 °C)
- 5.0 mA
- (IC = 10 mA, IB = 0.5 mA)
- 0.25
- (IC = 100 mA, IB = 5.0 mA)
- 0.6
- (IC = 2.0 mA, VCE = 5.0 V)
- 660
- (IC = 10 mA, VCE = 5.0 V)
- 770
- (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
- 100
- (VCB = 10 V, f = 1.0 MHz)
- 4.5
Performance
- Junction and Storage Temperature TJ, Tstg −55 to
- +150 °C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.