AOT412
Alpha & Omega Semiconductor (AOS) AOT412 (power MOSFET (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
Alpha & Omega Semiconductor (AOS) AOT412 (power MOSFET (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- AOS
- Part number
- AOT412
- Category
- Power MOSFETs (N-Channel)
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
37 parametersConstruction
- Continuous Drain TC=25°C
- 60
- Continuous Drain TA=25°C
- 8.2
- Avalanche energy L=0.1mH C EAS,EAR
- 110 mJ
- Power Dissipation B TC=100°C
- 75
- Power Dissipation TA=70°C
- 1.7
- Maximum Junction-to-Ambient A t ≤ 10s
- 15 °C/W
- Maximum Junction-to-Ambient A D Steady-State
- 40 °C/W
- Maximum Junction-to-Case Steady-State RqJC
- 0.7 °C/W
- VDS=100V, VGS=0V
- 10
- VGS=10V, ID=20A
- 13.2
- TO220 TJ=125°C
- 25
- gFS Forward Transconductance VDS=5V, ID=20A
- 30 S
- Ciss Input Capacitance
- 680 pF
- Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz
- 260 pF
- Crss Reverse Transfer Capacitance
- 100 pF
- Qg(10V) Total Gate Charge
- 45 nC
- Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A
- 17 nC
- Qgd Gate Drain Charge
- 15 nC
- tD(on) Turn-On DelayTime
- 19 ns
- tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2W
- 16 ns
- tD(off) Turn-Off DelayTime RGEN=3W
- 27 ns
- tf Turn-Off Fall Time
- 10 ns
- trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms
- 22 ns
- Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
- 96 nC
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±25 V
- Current TC=100°C
- 44 A
- Current TA=70°C
- 6.6
- Avalanche Current C IAS,IAR
- 47 A
- Junction and Storage Temperature Range TJ
- 55 to 175 °C
- BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V
- 100 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±25V
- 100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250mA
- 3.2 V
- ID(ON) On state drain current VGS=10V, VDS=5V
- 140 A
- VSD Diode Forward Voltage IS=1A,VGS=0V
- 0.65 V
- IS Maximum Body-Diode Continuous Current
- 60 A
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz
- 1 W
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.