AON6403
Alpha & Omega Semiconductor (AOS) AON6403 (power MOSFET (P-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Package
- DFN5x6-8L (DFN-8)
Product overview
Alpha & Omega Semiconductor (AOS) AON6403 (power MOSFET (P-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- AOS
- Part number
- AON6403
- Category
- Power MOSFETs (P-Channel)
- Package
- DFN5x6-8L (DFN-8)
- Packaging
- Tape & Reel
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
38 parametersConstruction
- Continuous Drain TC=25°C
- 85
- Continuous Drain TA=25°C
- 21
- Repetitive avalanche energy L=0.1mH C
- 259 mJ
- Power Dissipation B TC=100°C
- 33
- Power Dissipation A TA=70°C
- 1.4
- Maximum Junction-to-Ambient t ≤ 10s
- 14 °C/W
- Maximum Junction-to-Ambient A D Steady-State
- 40 °C/W
- Maximum Junction-to-Case Steady-State RqJC
- 1 °C/W
- VDS=-30V, VGS=0V
- 1
- VGS=-10V, ID=-20A
- 2.6
- VGS=-4.5V, ID=-20A
- 3.5 mW
- gFS Forward Transconductance VDS=-5V, ID=-20A
- 82 S
- Ciss Input Capacitance 6
- 600 pF
- Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz
- 320 pF
- Crss Reverse Transfer Capacitance
- 050 pF
- Qg(10V) Total Gate Charge
- 163 nC
- Qg(4.5V) Total Gate Charge
- 79 nC
- Qgs Gate Source Charge
- 22 nC
- Qgd Gate Drain Charge
- 33 nC
- tD(on) Turn-On DelayTime
- 13 ns
- tr Turn-On Rise Time VGS=-10V, VDS=-15V
- 18 ns
- tD(off) Turn-Off DelayTime RL=0.75W, RGEN=3W
- 135 ns
- tf Turn-Off Fall Time
- 52 ns
- trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/ms
- 26 ns
Performance
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Current TC=100°C
- 67 A
- Current TA=70°C
- 17
- Avalanche Current C
- 72 A
- Junction and Storage Temperature Range TJ
- 55 to 150 °C
- BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V
- 30 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±20V
- ±100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA
- 1.7 V
- ID(ON) On state drain current VGS=-10V, VDS=-5V
- 280 A
- RDS(ON) Static Drain-Source On-Resistance TJ=125°C
- 3.6
- VSD Diode Forward Voltage IS=-1A,VGS=0V
- 0.7 V
- IS Maximum Body-Diode Continuous Current
- 85 A
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz
- 2 W
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.