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STM / MOSFETs

STF16N60M6

STM · MOSFETs

New & Original Prototype to volume sourcing
COMPONENT PROFILE
TO-220 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

TO-220 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
TO-220FP

Product overview

STM MOSFETs STF16N60M6 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.

Manufacturer
STM
Part number
STF16N60M6
Category
MOSFETs
Package
TO-220FP
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

33 parameters

Construction

PTOT Total power dissipation at TC = 25 °C
25 W
dv/dt(3) MOSFET dv/dt ruggedness
50 V/ns
VISO
2.5 kV
VGS = 0 V, VDS = 600
1
VGS = 0 V, VDS = 600 V, TC = 125 °C
100
Ciss Input capacitance
575 pF
Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0
33 pF
Crss Reverse transfer capacitance
3 pF
Qg Total gate charge
16.7 nC
Gate-drain charge
9.4 nC
td(on) Turn-on delay time VDD = 300 V, ID = 6 A
13 ns
tr Rise time RG = 4.7 Ω, VGS = 10
7.6 ns
tf Fall time Figure 18. Switching time waveform)
6.8 ns
trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs
210 ns
Qrr Reverse recovery charge VDD = 60
1.7 μC
Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
3.2 μC

Performance

VDS Drain-source voltage
600 V
VGS Gate-source voltage
±25 V
ID Drain current (continuous) at TC = 25 °C
12 A
ID Drain current (continuous) at TC = 100 °C
7.6 A
IDM(1) Drain current (pulsed)
32 A
dv/dt(2) Peak diode recovery voltage slope
15 V/ns
RthJC Thermal resistance, junction-to-case
5 °C/W
RthJA Thermal resistance, junction-to-ambient
62.5 °C/W
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.2
5 V
V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0
600 V
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25
±5 μA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
4 V
RDS(on) Static drain-source on resistance VGS = 10 V, ID = 6
260 mΩ
Rg Gate input resistance f = 1 MHz, ID = 0
5.2 Ω
ISD Source-drain current
12 A
ISDM(1) Source-drain current (pulsed)
32 A
VSD(2) Forward on voltage ISD = 12 A, VGS = 0
1.6 V

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Frequently asked questions

Common pre-quotation questions and selection notes to help you verify key parameters and sourcing before requesting a quote.

What is a drop-in replacement for STF16N60M6?

STF16N60M6 is an N-channel 600 V / 12 A MOSFET in TO-220FP. A pin-to-pin compatible substitute must match three things: V_DS ≥ 600 V, R_DS(on) ≤ 260 mΩ, and the identical TO-220FP footprint. Always verify avalanche rating and gate charge (Q_g ≈ 16.7 nC) against your driver before swapping.

How do I choose a MOSFET alternative?

Three checks: (1) V_DS must be ≥ original with ~20% headroom for spikes; (2) R_DS(on) should be ≤ original, evaluated at your real operating temperature; (3) package must be identical (TO-220 ≠ TO-263). Also confirm gate charge (Q_g) and avalanche energy match, or re-test the driver.

Which parameters matter most when comparing MOSFETs?

Focus on V_DS (voltage rating), I_D (continuous current at your case temperature, not just 25 °C), R_DS(on) (conduction loss), and Q_g (switching speed / driver match). For inductive loads, also check avalanche rating.

How do I verify the part is genuine / avoid counterfeit?

Buy only from authorized or franchised channels. On receipt, check: (1) laser-etched markings that solvent will not remove; (2) batch / lot code consistent between label and device; (3) original reel or tube packaging; (4) request traceability documents (CoC, date code). For critical parts, third-party X-ray / decapsulation testing is recommended.

How do I read the markings / date code on a chip?

Most active ICs use a 4-digit date code YYWW (year + week, e.g. 2345 = 2023 week 45). The top mark is manufacturer logo + base part number + lot code. For SMD code lookup, search by "marking code + package" on AllDataSheet / Octopart / LCSC.

What does the package code mean (TO-220, SOT-23, QFP…)?

Package codes describe the physical form factor and pin layout — critical when sourcing, because electrically equivalent parts in different packages will not fit the PCB. Common: TO-220 (3-terminal power), SOT-23 (3-pin small signal), DIP / SOIC (through-hole / SMD ICs), QFP / QFN (MCUs, processors).

What if my original model is discontinued (EOL / NRND)?

Three options: (1) the manufacturer’s recommended replacement; (2) franchised distributor legacy stock; (3) a functionally compatible cross-brand part — provided pinout and key parameters match. Always evaluate on a real board before mass swap.

What is the minimum order quantity (MOQ) and lead time?

We support both sample and volume orders. Minimum order quantity, stock availability and lead time are confirmed per inquiry — tell us your model and quantity and we will quote. Sample quantities for design validation are supported.

Can I get the datasheet and samples?

The full datasheet is linked on this page. For parts without a direct datasheet, we can locate the manufacturer document on request. Sample requests are supported — contact us with your model and quantity.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.