COMPONENT PROFILE
REASUNOSMOSFETRS18N50F
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
REASUNOS MOSFET RS18N50F is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- REASUNOS
- Part number
- RS18N50F
- Category
- MOSFET
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
19 parametersConstruction
- BVDSS
- 500 V
- IDSS
- 1 µA
- RDS(on)
- 0.28
- td(ON) Turn- on Delay Time
- 43.5
- trise Rise Time
- 65 VDS=250V
- td(OFF) Turn- OFF Delay Time
- 76 RG=25Ω
- tfall Fall Time
- 16
- Ciss Input Capacitance
- 2800
- Coss Output Capacitance
- 240
- Crss Reverse Transfer Capacitance
- 12
- Qg Total Gate Charge
- 60
- Qgs Gate- to- Source Charge
- 13 nCID=18A
- Qgd Gate-to-Drain(" Miller") Charge
- 22
- trr Reverse Recovery Time
- 490 nSVGS=0V
- Qrr Reverse Recovery Charge
- 5.3 µCA/µs
Performance
- VGS(TH) Gate Threshold Voltage
- 4 V
- IS Continuous Source Current
- 18
- ISM Maximum Pulsed Current
- 72
- VSD Diode Forward Voltage
- 1.2
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.