NCE01H11
NCE Power NCE01H11 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
NCE Power NCE01H11 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE01H11
- Category
- Trench MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
31 parametersConstruction
- Maximum Power Dissipation
- 220 W
- Derating factor
- 1.47 W/℃
- Input Capacitance Clss
- 500 PF
- Output Capacitance Coss
- 380 PF
- Reverse Transfer Capacitance Crss
- 330 PF
- Turn-on Delay Time td(on)
- 26 nS
- Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω
- 24 nS
- Turn-Off Delay Time td(off) VGS=10V,RG=2.5Ω
- 91 nS
- Turn-Off Fall Time tf
- 39 nS
- Total Gate Charge Qg
- 163 nC
- Gate-Source Charge Qgs
- 31 nC
- Gate-Drain Charge Qgd
- 64 nC
- Reverse Recovery Time trr TJ = 25°C, IF = 40A
- 42 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 66 nC
- Forward Transconductance gFS VDS=25V,ID=57A
- 90 S
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous (Silicon Limited)
- 110 A
- Drain Current-Continuous (Package Limited)
- 110 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 78 A
- Operating Junction and Storage Temperature Range TJ,TSTG -5
- 5 To 175 ℃
- Thermal Resistance,Junction-to-Case(Note 2) RθJC
- 0.68 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100
- 113 V
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2
- 3 V
- Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A
- 6.8 mΩ
- Diode Forward Voltage (Note 3) VSD VGS=0V,IS=40A
- 1.2 V
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
- 113 V
- Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 3 V
- Diode Forward Current
- 110 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Frequently asked questions
Common pre-quotation questions and selection notes to help you verify key parameters and sourcing before requesting a quote.
What is a drop-in replacement for NCE01H11?
NCE01H11 is an N-channel 100 V / 110 A MOSFET in TO-220. A pin-to-pin compatible substitute must match three things: V_DS ≥ 100 V, R_DS(on) ≤ 6.8 mΩ, and the identical TO-220 footprint. Always verify avalanche rating and gate charge (Q_g ≈ 163 nC) against your driver before swapping.
How do I choose a MOSFET alternative?
Three checks: (1) V_DS must be ≥ original with ~20% headroom for spikes; (2) R_DS(on) should be ≤ original, evaluated at your real operating temperature; (3) package must be identical (TO-220 ≠ TO-263). Also confirm gate charge (Q_g) and avalanche energy match, or re-test the driver.
Which parameters matter most when comparing MOSFETs?
Focus on V_DS (voltage rating), I_D (continuous current at your case temperature, not just 25 °C), R_DS(on) (conduction loss), and Q_g (switching speed / driver match). For inductive loads, also check avalanche rating.
How do I verify the part is genuine / avoid counterfeit?
Buy only from authorized or franchised channels. On receipt, check: (1) laser-etched markings that solvent will not remove; (2) batch / lot code consistent between label and device; (3) original reel or tube packaging; (4) request traceability documents (CoC, date code). For critical parts, third-party X-ray / decapsulation testing is recommended.
How do I read the markings / date code on a chip?
Most active ICs use a 4-digit date code YYWW (year + week, e.g. 2345 = 2023 week 45). The top mark is manufacturer logo + base part number + lot code. For SMD code lookup, search by "marking code + package" on AllDataSheet / Octopart / LCSC.
What does the package code mean (TO-220, SOT-23, QFP…)?
Package codes describe the physical form factor and pin layout — critical when sourcing, because electrically equivalent parts in different packages will not fit the PCB. Common: TO-220 (3-terminal power), SOT-23 (3-pin small signal), DIP / SOIC (through-hole / SMD ICs), QFP / QFN (MCUs, processors).
What if my original model is discontinued (EOL / NRND)?
Three options: (1) the manufacturer’s recommended replacement; (2) franchised distributor legacy stock; (3) a functionally compatible cross-brand part — provided pinout and key parameters match. Always evaluate on a real board before mass swap.
What is the minimum order quantity (MOQ) and lead time?
We support both sample and volume orders. Minimum order quantity, stock availability and lead time are confirmed per inquiry — tell us your model and quantity and we will quote. Sample quantities for design validation are supported.
Can I get the datasheet and samples?
The full datasheet is linked on this page. For parts without a direct datasheet, we can locate the manufacturer document on request. Sample requests are supported — contact us with your model and quantity.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.