STM / Bipolar Transistors (BJT)
2STF1360
Discrete Semiconductor / IC
COMPONENT PROFILE
STMBipolar Transistors (BJT)2STF1360
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor / IC
- Manufacturer
- STM
- Part number
- 2STF1360
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
13 parametersConstruction
- ICBO VCB = 80
- 100 nA
- IEBO VEB = 6
- 100 nA
- Collector-emitter IC = 2 A IB = 100 mA
- 130 mV
- VBE(sat) (1) IC = 2 A _ IB = 100 mA
- 0.9 V
- IC = 100 mA_ VCE = 2
- 80
- IC = 1 A _ VCE = 2
- 400
- td Delay time IC = 3 A VCC = 10
- 17 ns
- tr Rise time IB(on) = - IB(off) = 300 mA
- 81 ns
- ts Storage time VBE(off) = - 5
- 620 ns
- tf Fall time
- 54 ns
- fT Transition frequency IC = 0.1 A __ VCE = 10
- 130 MHz
Performance
- VBE(on) Base-emitter on voltage VCE = 2 V IC = 100 mA
- 650 mV
- saturation voltage IC = 3 A _ IB = 150 mA
- 180 mV
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.